▎ 摘　　要

NOVELTY - The structure has a single crystalline graphene monolayer placed on a substrate (22) including surface area of greater than 15 square inches, where the single crystalline monolayer is patterned to form a conductive channel for electronic devices. The single crystalline monolayer of the graphene is placed on the substrate by a single transfer process and directly present on an entirety of an upper surface of a semiconductor substrate. The semiconductor substrate comprises silicon, gallium-arsenide, silicon-glucinium, gallium-nitride and indium-phosphorus. USE - Solid state device structure for an electronic device (claimed) i.e. graphene device, for use in a microelectronics application. Can also be used for an optical device and an optoelectronic device. ADVANTAGE - The structure allows a stressor layer to grip a closest monolayer and lift a handle substrate as a result in a high-quality mechanical exfoliation and lift-off of the closest monolayer, thus providing a higher quality monolayer and improving performance of the graphene by increasing carrier mobility, and hence avoiding cracking when the graphene is mechanically more robust. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of a monolayer with remnants of two-dimensional (2D) material transferred to a substrate. Spreading layer (14) Stressor layer (16) Adhering layer (18) Handle substrate (20) Substrate of solid state device structure (22)