▎ 摘　　要

NOVELTY - The detector has a semiconductor substrate formed with a graphene channel that is formed with a gate oxide layer. The graphene channel is provided with an absorbing-type organic thin film, a coupling source electrode and a leakage electrode. The absorbing-type organic thin film is doped with p-disperse red-1 (p-DR1) and 2, 7-dipentyl-benzothieno-3, 2-bi-benzothiophene. Doped proportion of p-DR1 is measured for about 4-6 %. The coupling source electrode and a leakage electrode are made of metal electrode material i.e. Gold. USE - High sensitivity UV light detector. ADVANTAGE - The detector requires less photoelectric device working time, and has high flexibility. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a high sensitivity UV light detector manufacturing method. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of a high sensitivity UV light detector.