▎ 摘　　要

NOVELTY - Preparing graphene semiconductor comprises (i) providing silicon carbide substrate, flattening the surface of the silicon carbide substrate using hydrogen, ensuring etching effect of the substrate at 1450-1600 degrees C for 25-35 minutes to form surface with atomic level flatness step array morphology, (ii) heating the silicon carbide substrate, making the carbon atom self-assembly process more complete to produce large-area and uniform graphene film, (iii) heating the surface of the silicon carbide substrate at 1400-1500 degrees C under ultra-high vacuum environment, breaking carbon-silicon bond on the surface of the silicon carbide substrate, subliming and desorbing silicon atoms from the surface before carbon atoms, reconstructing the carbon atoms enriched on the surface to form a hexagonal honeycomb-shaped graphene film, (iv) depositing semiconductor material particles on the surface of the graphene film prepared in step (iii) to form graphene semiconductor composite material. USE - The semiconductor is useful for manufacturing device (claimed). ADVANTAGE - The semiconductor: has large-area, high-quality graphene, excellent uniformity and compatibility with current integrated circuit technology. DETAILED DESCRIPTION - Preparing graphene semiconductor comprises (i) providing silicon carbide substrate, flattening the surface of the silicon carbide substrate using hydrogen, ensuring etching effect of the substrate at 1450-1600 degrees C for 25-35 minutes to form surface with atomic level flatness step array morphology, (ii) heating the silicon carbide substrate at 1000-1100 degrees C under 1.5 l/minute under argon atmosphere, making the C atom self-assembly process more complete to produce large-area and uniform graphene film, (iii) heating the surface of the silicon carbide substrate at 1400-1500 degrees C under ultra-high vacuum environment, breaking carbon-silicon bond on the surface of the silicon carbide substrate, subliming and desorbing silicon atoms from the surface before carbon atoms, reconstructing the carbon atoms enriched on the surface to form a hexagonal honeycomb-shaped graphene film, (iv) depositing semiconductor material particles on the surface of the graphene film prepared in step (iii) to form graphene semiconductor composite material. INDEPENDENT CLAIMS are also included for: (1) An INDEPENDENT CLAIM is also included for manufacturing device used in the method for manufacturing graphene semiconductor comprising a hydrogen etching module, which uses hydrogen to level the silicon carbide substrate, and carbon atom self-assembly module, where argon is used to heat the silicon carbide substrate, homoepitaxial growth module under ultra-high vacuum to prepare graphene film and the reaction synthesis module; and (2) method for graphene semiconductor preparation device.