▎ 摘　　要

NOVELTY - Forming graphene film on surface (20) of substrate comprises: locating carbon source (22) at or in vicinity of the surface; controlling ambient conditions at surface of substrate to inhibit graphene nucleation on surface; applying temporary change of at least one of ambient condition at localized site (30) on surface of substrate to initiate graphene nucleation at localized site; and controlling ambient conditions at surface of the substrate, following initiation of graphene nucleation at localized site, to simultaneously inhibit graphene nucleation and enable graphene growth on surface. USE - The method is useful for forming a graphene film on a surface of a substrate (claimed), where the graphene is used in fast and flexible electronics, lasers, bio-sensors, atomically thin protective coatings, hydrogen storage and energy storage applications. ADVANTAGE - The method: provides graphene film which is single-domain film without any domain boundaries; and utilizes the graphene that exhibits higher carrier mobility than conventional semiconductor materials. DESCRIPTION OF DRAWING(S) - The figure shows a stable graphene nucleus that is formed on the surface of the substrate. Surface (20) Carbon source (22) Carbon atoms (24) Localized site (30) Graphene nucleus (32)