• 专利标题:   Graphene quantum dot-based phot-anode for graphene-based quantum dot-dye-sensitized solar cell (claimed), has dye, electrolyte, and counter electrode.
  • 专利号:   CN113707462-A, CN113707462-B
  • 发明人:   CHEN T, GE Z, LIU J
  • 专利权人:   UNIV SHANDONG
  • 国际专利分类:   H01G009/042, H01G009/20
  • 专利详细信息:   CN113707462-A 26 Nov 2021 H01G-009/20 202218 Chinese
  • 申请详细信息:   CN113707462-A CN10928697 13 Aug 2021
  • 优先权号:   CN10928697

▎ 摘  要

NOVELTY - The anode has a fluorine-doped tin oxide (FTO) conductive glass, and an inorganic semiconductor film, such as titanium dioxide (TiO2) semiconductor film, which is provided on the conductive glass. A graphene quantum dot material is deposited on the surface of the insulating semiconductor membrane. The graphene quantum dot material is synthesized by a one-step hydrothermal method at a temperature of 150-250degrees C, in which a temperature of 150-250degrees C is maintained for 0.5-3 hours, and a glucose solution is used as a precursor. USE - Graphene quantum dot-based phot-anode for graphene-based quantum dot-dye-sensitized solar cell (claimed). ADVANTAGE - The dye-sensitized solar cell light anode exhibits the best photoelectric conversion performance. The resonance energy transfer effect and ultra-fast electron transfer channel are realized between the graphene quantum dot and dye molecule and TiO2 respectively, thus enhancing the current density of the battery. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following: (1) a preparation method of photo-anode of dye-sensitized solar cell based on graphene quantum dot; and (2) a preparation method of the graphene-based quantum dot-dye-sensitized solar cell. DESCRIPTION OF DRAWING(S) - The drawing shows a graphical representation of the FTIR diagram of the graphene quantum dot solution of different heating time.