▎ 摘　　要

NOVELTY - Manufacture of graphene-grown low-temperature substrate involves forming non-catalytic layer on a substrate, supplying carbon-containing gas and etching gas at 500 degrees C, performing inductively-coupled plasma chemical-vapor deposition process, adsorbing hydrocarbon radical on the non-catalytic layer and performing inductively-coupled plasma chemical vapor deposition process. USE - Manufacture of graphene-grown low-temperature substrate (claimed). ADVANTAGE - The method provides graphene-grown low-temperature substrate without using metal catalyst. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for device for manufacturing graphene-grown low-temperature substrate.