▎ 摘　　要

NOVELTY - The method involves processing graphene oxide solution with hydrogen plasma gas. The restored graphene oxide solution is baked and diluted with ultra-pure water. The treated graphene oxide solution is coated on silicon wafer. USE - Method for forming graphene coated layer used during manufacturing of semiconductor device (claimed) for portable electronic device e.g. personal computer and domestic appliance. ADVANTAGE - The graphene layer can be coated uniformly on the substrate. The semiconductor device having the high conductivity can be manufactured effectively. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for manufacturing method of semiconductor device. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic diagram illustrating the process for forming graphene coated layer. Material (11) Graphene sheets (11-1-11-5)