• 专利标题:   Method of forming nano crystalline graphene, involves arranging substrate having pattern in reaction chamber, injecting reaction gas into reaction chamber, reaction gas including carbon source gas, inert gas, and hydrogen gas that are mixed, generating plasma of reaction gas in reaction chamber.
  • 专利号:   US2023017244-A1, KR2023012907-A
  • 发明人:   LEE C, JUNG A, SHIN H, SHIN K, SHIN K W, SHIN H J, JUNG A R, LEE C S
  • 专利权人:   SAMSUNG ELECTRONICS CO LTD, SAMSUNG ELECTRONICS CO LTD
  • 国际专利分类:   C01B032/186, C23C016/02, C23C016/26, C23C016/505, C23C016/511, H01L021/285, H01L021/768, H01L023/532, B82Y040/00
  • 专利详细信息:   US2023017244-A1 19 Jan 2023 H01L-021/768 202309 English
  • 申请详细信息:   US2023017244-A1 US552756 16 Dec 2021
  • 优先权号:   KR093750

▎ 摘  要

NOVELTY - Method of forming nano crystalline graphene, involves arranging substrate having pattern in reaction chamber; injecting reaction gas into reaction chamber, reaction gas including carbon source gas, inert gas, and hydrogen gas that are mixed; generating plasma of the reaction gas in reaction chamber; and directly growing nano crystalline graphene on surface of pattern using plasma of reaction gas at a process temperature, where pattern comprises first material and substrate comprises second material different from first material. USE - Method of forming nano crystalline graphene. ADVANTAGE - The pattern may include a first material and the substrate may include a second material different from the first material. DESCRIPTION OF DRAWING(S) - The drawing shows a perspective view of an interconnect structure. 10capping layer 20dielectric layer 30conductive wiring