• 专利标题:   Graphene manufacturing device for forming graphene thin film on silicon wafer, has substrate lifting unit for ascending and descending substrate, and gas supply part for supplying carbon source and purging gas to vacuum chamber.
  • 专利号:   KR2011092417-A
  • 发明人:   CHOI K J, WOONG C S
  • 专利权人:   NCD CO LTD
  • 国际专利分类:   C01B031/02, C23C016/26, H01L021/205
  • 专利详细信息:   KR2011092417-A 18 Aug 2011 C01B-031/02 201224 Pages: 9
  • 申请详细信息:   KR2011092417-A KR011821 09 Feb 2010
  • 优先权号:   KR011821

▎ 摘  要

NOVELTY - A graphene manufacturing device has a vacuum chamber provided with vacuum in an inner side, and a heating part installed in top of the vacuum chamber for heating the vacuum in the inner side of the vacuum chamber. A cooling part is installed at bottom of the vacuum chamber for circulating refrigerant. A substrate lifting unit is equipped for ascending and descending a substrate. A gas supply part supplies carbon source and purging gas to the vacuum chamber. USE - Graphene manufacturing device for forming a graphene thin film on a substrate i.e. silicon wafer. ADVANTAGE - The device forms graphene thin film through simple process, and facilitates mass-production of excellent graphene thin film at different processing conditions. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a method for manufacturing graphene. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of a graphene manufacturing device.