• 专利标题:   Printing method of graphene electrode of polycrystalline silicon cell, involves printing back electrode using silver paste, printing back surface using aluminum paste, printing front surface using graphene paste, drying and sintering.
  • 专利号:   CN104134709-A
  • 发明人:   CHEN L, DING Z, DU Z
  • 专利权人:   WUXI SHANGPIN SOLAR ENERGY SCI TECHNOL
  • 国际专利分类:   H01L031/0224, H01L031/18
  • 专利详细信息:   CN104134709-A 05 Nov 2014 H01L-031/0224 201504 Pages: 5 Chinese
  • 申请详细信息:   CN104134709-A CN10399686 14 Aug 2014
  • 优先权号:   CN10399686

▎ 摘  要

NOVELTY - Printing method of graphene electrode involves performing printing of back electrode using silver paste at printing pressure of 75-80 N and printing speed of 250-300 mm/second, printing aluminum back surface using aluminum paste at printing pressure of 75-80 N and printing speed of 250-300 mm/second, printing front surface of graphene electrode using graphene paste at printing pressure of 50-70 N and printing speed of 150-250 mm/second, drying at 300-400 degrees C, and sintering at 400-800 degrees C with speed of 5200-5600 mm/minute. USE - Printing method of graphene electrode of polycrystalline silicon cell. ADVANTAGE - The printing of graphene electrode is performed efficiently and economically by simple method. DETAILED DESCRIPTION - Printing method of graphene electrode involves performing printing of back electrode using silver paste at printing pressure of 75-80 N, printing speed of 250-300 mm/second and drying temperature of 100-150 degrees C, printing aluminum back surface using aluminum paste at printing pressure of 75-80 N, printing speed of 250-300 mm/second and drying temperature of 100-180 degrees C, printing front surface of graphene electrode using graphene paste at printing pressure of 50-70 N and printing speed of 150-250 mm/second, drying at 300-400 degrees C, and sintering in a sintering furnace at 400-800 degrees C with speed of 5200-5600 mm/minute.