▎ 摘　　要

NOVELTY - The memory has an inert metal electrode formed with a solid-state electrolyte resistive functional layer and an easily oxidizable metal electrode. A graphene barrier layer is inserted between the inert metal electrode and the solid-state electrolyte resistive functional layer. The graphene barrier layer stops easily oxidizable metal ions from migrating into the inert metal electrode through the solid-state electrolyte resistive functional layer under effects of an electric field during a device programming process. USE - Non-volatile resistive memory. ADVANTAGE - The device is designed such that layers of graphene thin films servings as a metal ion barrier layer are added between the inert metal electrode and the solid-state electrolyte resistive functional layer to stop electrically-conductive metal filaments formed in the solid-state electrolyte resistive functional layer from spreading into the inert metal electrode layer during device programming process, thus eliminating occurrence of phenomenon of erroneous programming during a device erase process and increasing reliability of the memory. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a method for fabricating a non-volatile resistive memory. DESCRIPTION OF DRAWING(S) - The drawing shows a flow diagram illustrating a method for fabricating a non-volatile resistive memory. '(Drawing includes non-English language text)' Step for forming inert metal electrode on insulating substrate (AA) Step for forming graphene barrier layer on inert metal electrode (BB) Step for forming resistive functional layer on graphene barrier layer (CC) Step for forming easily oxidizable metal electrode on resistive functional layer (DD)