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  • 专利标题:   Preparation of conductive film by depositing layer of nickel on clean and dry glass substrate, chemical vapor depositing graphene layer at carbon source methane and mixed gas hydrogen and helium gas, cooling, cleaning, and drying.
  • 专利号:   CN105957646-A
  • 发明人:   HE J
  • 专利权人:   CHENGDU TIANHANG ZHIHONG CORP MANAGEMENT
  • 国际专利分类:   C01B031/04, H01B013/00, H01B005/14
  • 专利详细信息:   CN105957646-A 21 Sep 2016 H01B-013/00 201677 Pages: 6 Chinese
  • 申请详细信息:   CN105957646-A CN10464566 24 Jun 2016
  • 优先权号:   CN10464566

▎ 摘　　要

NOVELTY - A conductive film is prepared by depositing a layer of nickel on clean and dry glass substrate, chemical vapor depositing graphene layer at graphene thickness of 50-100 mu m, carbon source methane, mixed gas hydrogen and helium gas, cooling to room temperature, cleaning, removing surface nickel film layer, and drying. USE - Method for preparing conductive film (claimed). ADVANTAGE - The method features low production cost, simple preparation and high efficiency.