• 专利标题:   Graphene lens structure for use with light engine and grid laser structure has laser-emitting epitaxial structure that is back-emitting while located on back of laser-emitting epitaxial structure.
  • 专利号:   US2018366907-A1, WO2018232410-A1
  • 发明人:   JOSEPH J R, JOSEPH J
  • 专利权人:   OPTIPULSE INC, OPTIPULSE INC
  • 国际专利分类:   H01S005/183, H01S005/187, H01S005/42
  • 专利详细信息:   US2018366907-A1 20 Dec 2018 H01S-005/183 201901 Pages: 35 English
  • 申请详细信息:   US2018366907-A1 US011417 18 Jun 2018
  • 优先权号:   US520868P, US011417

▎ 摘  要

NOVELTY - The graphene lens structure has a laser-emitting epitaxial structure having a front and a back. The laser-emitting epitaxial structure is back-emitting. The graphene lens structure located on the back of the laser-emitting epitaxial structure. The laser-emitting epitaxial structure comprises multiple laser regions. The graphene lens structure directs light from each of the laser regions. USE - Graphene lens structure for use with light engine and grid laser structure of semiconductor laser. ADVANTAGE - The design of high power high speed light sources exhibit both high frequency operation and a rigid structure, thus enhancing performance and reliability. The physical separations dramatically reduce capacitance, increasing the frequency response and yielding high frequency operation for the lasing grid. The single structure and the ground contact can then be integrated to a high speed electrical waveguide substrate enabling high frequency responses from the entire grid. The plating adds height to the active region reducing capacitance and it removes heat from the active region of the devices to give the devices better performance. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a manufacturing method for graphene lens structure. DESCRIPTION OF DRAWING(S) - The drawing shows a cross sectional view of the top emitting implant. Single mesa structure (12) Etched region (13) Frame (14) Quantum well (15) N mirror (16)