▎ 摘　　要

NOVELTY - Method for forming film, involves carrying a substrate having a recess into a processing container, placing on a mounting table provided in the processing container, using the plasma of the mixed gas containing inert gas and carbon-containing gas, while applying a high frequency bias in which the electric power is equal to or less than the upper limit value determined according to the pressure in the processing container to the above-mentioned stand, and forming a graphene film on the substrate. USE - The method is useful for forming film. ADVANTAGE - The method formally forms the graphene film on the substrate having a recess with excellent coverage. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a film forming device comprising a processing container that can accommodate a substrate with a recess, a mounting table provided in the processing container, a high-frequency bias power supply capable of applying a high-frequency bias to the above-mentioned table, a gas supply unit for supplying the processing gas into the processing container, and a control unit carries the substrate into the processing container, while applying a high-frequency bias in which the electric power is equal to or less than the upper limit value determined according to the pressure in the processing container, where the loading process of mounting on the above-mentioned table, and a film forming method including a film forming step of forming a graphene film on the substrate by plasma of a mixed gas containing an inert gas and a carbon-containing gas is executed in each portion.