• 专利标题:   Growing vertical graphene film comprises preparing substrate and depositing graphene film on substrate by hot filament chemical vapor deposition (CVD) method.
  • 专利号:   CN111675209-A
  • 发明人:   LI M, YANG Z, LI H, LI C, YANG B
  • 专利权人:   UNIV TIANJIN TECHNOLOGY
  • 国际专利分类:   C01B032/186, C23C016/26, C23C016/448
  • 专利详细信息:   CN111675209-A 18 Sep 2020 C01B-032/186 202080 Pages: 28 Chinese
  • 申请详细信息:   CN111675209-A CN10490796 02 Jun 2020
  • 优先权号:   CN10490796

▎ 摘  要

NOVELTY - Growing vertical graphene film comprises preparing a substrate and depositing a graphene film on the substrate by hot filament CVD method, where during deposition, introducing a first gas into the chamber where the substrate is located during deposition, introducing the first gas discharged after the solution before entering the chamber and using the solution contains anhydrous ethanol and the anhydrous ethanol as carbon source. USE - The method is useful for growing vertical graphene film. ADVANTAGE - The method: is environmentally friendly and safe; utilizes ethanol as a carbon source to inhibit other carbon structures; facilitates the formation of graphite phases and achieves full coverage of graphene on the substrate. The film: has high electrochemical activity, high structural stability and adapts to extreme environment of high and low temperature.