▎ 摘　　要

NOVELTY - The method involves using chemical vapour deposition process to prepare graphene film on a substrate. The angle between the gas flow direction and the substrate is 80 to 100 degrees, in the chemical vapour deposition process. The substrate is arranged on a carrier. The carrier comprises a base and a support portion arranged on the base. The support portion is provided with several grooves (231). The bottom surface of the base comprises an arc surface. The base comprises two brackets with a first surface and a second surface. The pressure in the chemical vapour deposition process is 500 to 8000Pa. USE - Method for preparing graphene wafer in batches using carrier (claimed). ADVANTAGE - The uniform preparation of large-scale graphene films at the wafer level can be achieved. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following: (1) a carrier; and (2) a device for preparing graphene wafer. DESCRIPTION OF DRAWING(S) - The drawing shows a perspective view of the carrier. Brackets (21, 22) Supporting rod (23) Groove (231)