▎ 摘　　要

NOVELTY - The semiconductor device structure has a mesa (120) that is extended above a substrate (50). The mesa comprises a channel region between a first side and a second side of the mesa. A first gate on the first side of the mesa comprises a first gate insulator (160). A first gate conductor (150) comprises graphene that overlies the first gate insulator. A second gate on second side of mesa comprises a second gate insulator. A second gate conductor comprises graphene that overlies second gate insulator. USE - Semiconductor device structure such as transistor. ADVANTAGE - The channel region is configured to allow current to flow between a source region and a drain region. The re-filled material is configured to withstand, without substantial deformation, higher fabrication temperatures than the metal seeds that could withstand. The intermediate process of removing and reforming the gate insulator material accommodates forming a gate insulator material of optimal electrical quality in the resulting array of vertical transistor devices. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for an array of vertical transistor devices. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of a semiconductor device structure. Substrate (50) Mesa (120) First gate conductor (150) First gate insulator (160) Array (300)