• 专利标题:   Semiconductor element of sensor, has semiconductor layer which contains one or more types chosen from carbon nanotube and graphene, and predetermined relationship between channel length and channel width of element is satisfied.
  • 专利号:   WO2017183534-A1, TW201803172-A, CN108780843-A, KR2018133408-A, JP2017520554-X, EP3447813-A1, US2019101507-A1
  • 发明人:   ISOGAI K, MURASE S, NAGAO K
  • 专利权人:   TORAY IND INC, TORAY IND INC, TORAY IND INC
  • 国际专利分类:   G01N027/414, H01L051/05, H01L051/30, H01L029/786, H01L021/336, H01L051/00, H01L029/16
  • 专利详细信息:   WO2017183534-A1 26 Oct 2017 H01L-051/05 201777 Pages: 73 Japanese
  • 申请详细信息:   WO2017183534-A1 WOJP014961 12 Apr 2017
  • 优先权号:   JP083356, CN80018514

▎ 摘  要

NOVELTY - The element has a semiconductor layer (4) arranged between the two electrodes (2, 3). The semiconductor layer contains 1 or more types chosen from a carbon nanotube and a graphene. The predetermined relationship between channel length (Lc) and channel width (Wc) of the semiconductor element is satisfied. The carbon nanotube is the carbon nanotube composite to which the polymer adhered in at least one unit of the surface. The polymer is a conjugated system polymer. The semiconductor element contain the polysiloxane layer on the board. USE - Semiconductor element of sensor (claimed). ADVANTAGE - The favorable switching characteristic is acquired. The semiconductor element is excellent in the switching characteristic. The high detection sensitivity of sensor is achieved. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a manufacturing method of the semiconductor element. DESCRIPTION OF DRAWING(S) - The drawing shows a model top view of the semiconductor element. Board (1) First electrode (2) Second electrode (3) Semiconductor layer (4)