▎ 摘　　要

NOVELTY - Selective growth and pattering of graphene comprises: depositing a fine-grained metal or alloy on an oxidized silicon substrate; annealing the metal during deposition to change the structure of the metal to amorphous, mixed texture and/or single texture; performing hydrocarbon dissolution by introducing a carbon precursor gas into the atmosphere pressure chemical vapor deposition furnace; growing a graphene layer by cooling the furnace at a defined rate while maintaining existing atmospheric composition, where graphene grows only upon metal having mixed or single texture and does not grow on metal having an amorphous texture; and releasing a graphene layer from the metal. The carbon precursor gas is methane, ethyne or ethylene. The metal is nickel or an alloy of nickel. USE - The method is useful for selective growth and pattering of graphene, which is useful for forming patterned graphene film. ADVANTAGE - The method: controls patterning of graphene without a mask; and provides maskless, patterned graphene film through use of a tunable metal as a catalyst for graphene growth. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a patterned graphene film.