▎ 摘 要
NOVELTY - Preparation of graphene or ultra-thin carbon film by physical vapor deposition comprises putting substrate in deposition chamber, cleaning surface at temperature of 70-100 degrees C, pressure of 0.5-1 Pa and voltage of - 50 to - 100 V by acetylene-argon mixed gas, ionizing to generate carbon-containing cation, depositing on substrate by electric field and vacuum annealing at 600-900 degrees C for 1-2 hours. USE - Method for preparing graphene or ultra-thin carbon film by physical vapor deposition (claimed).