▎ 摘　　要

NOVELTY - The method involves providing an epitaxial growth of a single layer graphene on the surface of platinum (111). A single-layer graphene is epitaxially grown on the surface of platinum by cracking ethylene at 800-1000 ?oC on platinum to suppress the selenization reaction on the surface of platinum in the temperature range of 250-500 ?oC. The polished platinum single crystal is heated to 800-1000 ?oC and the temperature unchanged is kept in a vacuum environment. The ethylene gas is introduced into the vacuum chamber until the pressure is 1 x 10-4Pa and the temperature and the air pressure are kept unchanged to ensure that ethylene is fully cracked on the surface of the platinum. USE - Method for utilizing graphene to suppress selenization reaction of platinum surface. ADVANTAGE - The method realizes the inhibition of selenylation reaction of the specific area so as to control the shape of single-layer diselenide platinum, by controlling the covering area of the graphene. The method provides a new way for realizing the patterning of the two-dimensional material and provided with wide potential in the low-dimensional materials, nano electronics, sensing and catalysis and other related research and application. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method for controlling growth of single-layer diselenide platinum by using graphene. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of a pallet separating and dropping device. (Drawing includes non-English language text)