• 专利标题:   Electrostatic deposition of graphene on substrate involves applying voltage across graphite sample secured to positive electrode and substrate placed over a second electrode, so as to transfer graphene from graphite sample to the substrate.
  • 专利号:   US7790242-B1, US2010233382-A1
  • 发明人:   SUMANASEKERA G, SIDOROV A N, OUSEPH P J, YAZDANPANAH M M, COHN R W, JALILIAN R
  • 专利权人:   UNIV LOUISVILLE RES FOUND INC
  • 国际专利分类:   B05D001/04, B05D001/00
  • 专利详细信息:   US7790242-B1 07 Sep 2010 B05D-001/04 201062 Pages: 8 English
  • 申请详细信息:   US7790242-B1 US248096 09 Oct 2008
  • 优先权号:   US978516P, US248096

▎ 摘  要

NOVELTY - Electrostatic deposition of graphene on a substrate (50), involves: securing a graphite sample (10) to a first electrode (20); electrically connecting the first electrode to a positive terminal of a power source (30); electrically connecting a second electrode (22) to a ground terminal of the power source; placing the substrate over the second electrode; and using the power source to apply a voltage, such that graphene is removed from the graphite sample and deposited on the substrate. USE - For electrostatic deposition of graphene on a substrate, where the substrate includes trench (claimed). ADVANTAGE - The method allows for the positioning of graphene on a suitable substrate at a selected location, thus allows for studying the fundamental properties of graphene and developing graphene-based devices. By using the method, the graphene can be deposited and positioned on very delicate structures, such as suspended microstructures and electronic devices. Furthermore, the ability to obtain graphene sheets of various thicknesses provides a unique way to pattern graphene for physical studies. Thus, the method provides a convenient alternative to the common method of mechanical cleaving of HOPG or another graphite sample, with the added benefit of selective deposition. The method also requires minimal resources and labor, yet allows for the deposition of a monolayer of graphene in a short period of time on any given substrate. Furthermore, graphene can be directly deposited without any chemical additives, thus eliminating a major source of contamination that previously had been difficult to remove. DETAILED DESCRIPTION - Electrostatic deposition of graphene on a substrate (50), involves: securing a graphite sample (10) to a first electrode (20); electrically connecting the first electrode to a positive terminal of a power source (30); electrically connecting a second electrode (22) to a ground terminal of the power source; placing the substrate over the second electrode; and using the power source to apply a voltage, such that graphene is removed from the graphite sample and deposited on the substrate. The method further involves: interposing an insulator (40) between the second electrode and the substrate, where the insulator is a mica sheet; and cleaving the sample of highly oriented pyrolytic graphite (HOPG) to provide an appropriate surface for securing the first electrode to the sample. The substrate is a conducting material. DESCRIPTION OF DRAWING(S) - The figure shows a schematic representation of an exemplary method for electrostatic deposition of graphene on a substrate. Graphite sample (10) First electrode (20) Second electrode (22) High voltage power source (30) Insulator (40) Substrate (50)