▎ 摘　　要

NOVELTY - The device has a device body connected with a photoelectric body and made of anyone among indium tin oxide, gallium doping zinc oxide, zinc oxide and indium gallium zinc oxide. A P-type semiconductor is made of multiple P-type semi-conductor purpose dots. A graphene material is provided with an alloy. A P-type semi-conductor purpose transparent electrode covers the P-type semiconductor. A P-type electrode is connected with the transparent electrode. An N-type semiconductor is made with multiple N-type semi-conductor purpose dots. USE - Semiconductor opto-electronic device. ADVANTAGE - The device reduces electricity consumption. The device is provided with the graphene material so as to improve light transmission efficiency and infrared ray (IR) efficiency. The device emits wide wavelength band light. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a semiconductor opto-electronic device manufacturing method. DESCRIPTION OF DRAWING(S) - The drawing shows a cross sectional view of a semiconductor opto-electronic device.