▎ 摘　　要

NOVELTY - The detector has a silicon dioxide isolation layer (2) provided with a silicon dioxide window (3). A surface of the silicon dioxide isolated layer is provided with a top electrode (5). An inner side wall of the top electrode is provided with a silicon dioxide insulation layer (4). A graphene thin film (6) is formed on an upper surface of a substrate (1). A bottom electrode (7) is provided at bottom of the substrate. Thickness of the silicon dioxide insulation layer is 1.5-2.5 nm. The top electrode is made of aluminum, gold or gold alloy chromium. USE - Avalanche photoelectric detector. ADVANTAGE - The detector can carry out wide-spectrum detection, eliminate dead layer, enhance absorption of incident light, restrain the reverse saturation electric current, reduce reverse bias and obtain high gain. The detector is inexpensive and simple to manufacture, and has high response degree and quick response speed. DETAILED DESCRIPTION - The bottom electrode is made of indium gallium alloy, titanium alloy or aluminum. An INDEPENDENT CLAIM is also included for a method for manufacturing a graphene/silicon dioxide/avalanche photoelectric detector. DESCRIPTION OF DRAWING(S) - The drawing shows a perspective view of an avalanche photoelectric detector. Substrate (1) Silicon dioxide isolation layer (2) Silicon dioxide window (3) Silicon dioxide insulation layer (4) Top electrode (5) Graphene thin film (6) Bottom electrode (7)