▎ 摘　　要

NOVELTY - Preparing polypyrrole nanowire interface modified three-dimensional graphene/polydimethylsiloxane composite photothermal material comprises e.g. cleaning the nickel foam, using absolute ethanol to ultrasonically remove organic matter on the surface, ultrasonicting, washing with deionized water, and drying it with nitrogen, argon or air, using argon/hydrogen as the carrier gas with a carrier gas flow rate, and reducing and removing the metal oxide on the foamed nickel surface, reducing the carrier gas flow rate and temperature, lowering the tube furnace to room temperature, and maintaining the argon/hydrogen carrier gas flow rate during the cooling process to obtain the foamed nickel-supported three-dimensional graphene, immersing the foamed nickel-supported three-dimensional grapheme as a substrate in the electrolyte, and depositing polypyrrole nanowires by a potentiostatic method, using the graphene and pyrrole material supported by foamed nickel as the substrate. USE - The method is useful for preparing polypyrrole nanowire interface modified three-dimensional graphene/polydimethylsiloxane composite photothermal material. ADVANTAGE - The method: has a continuous interface phase; solves the problem of poor compatibility between graphene and PDMS; improves the binding force between graphene and PDMS; improves photothermal conversion performance; can be widely used in high-performance electronic devices and high-tech industrial technology fields. DETAILED DESCRIPTION - Preparing polypyrrole nanowire interface modified three-dimensional graphene/polydimethylsiloxane composite photothermal material comprises (1) (1.1) cleaning the nickel foam, using absolute ethanol to ultrasonically remove organic matter on the surface, ultrasonicting, washing with deionized water, and drying it with nitrogen, argon or air, (1.2) using argon/hydrogen as the carrier gas with a carrier gas flow rate of 100/100 sccm, and reducing and removing the metal oxide on the foamed nickel surface at a temperature of 900-1000 degrees C, (1.3) reducing the carrier gas flow rate and temperature in step (1.2), the argon/hydrogen carrier gas flow rate is 190-180/10-20 sccm, the growth temperature is 850-900 degrees C, and the argon/hydrogen carrier gas is passed through the valve above the airtight container with absolute ethanol, the ethanol gas is brought into the tube furnace for graphene growth, and the graphene growth time is 20-40 minutes, (1.4) lowering the tube furnace to room temperature, and maintaining the argon/hydrogen carrier gas flow rate at 190-180/10-20 sccm during the cooling process to obtain the foamed nickel-supported three-dimensional graphene, (2) immersing the foamed nickel-supported three-dimensional grapheme as a substrate in the electrolyte, and depositing polypyrrole nanowires by a potentiostatic method, (3) using the graphene and pyrrole material supported by foamed nickel as the substrate, soaking in a 2-5 mol/l hydrochloric acid solution, adding 10-40 mg/ml ferric chloride, soaking for 24 hours, after the nickel is completely etched, taking out the material and washing with deionized water until the pH is neutral to obtain self-supporting polypyrrole nanowire modified three-dimensional graphene material, and drying at 40-100 degrees C and (4) placing the self-supporting polypyrrole nanowire modified three-dimensional graphene material in a mold, mixing polydimethylsiloxane and curing agent in a mass ratio of 10:1, vacuum filtering to defoam, and curing at 50-80 degrees C for 12-24 hours to obtain polypyrrole nanowire interface modified three-dimensional graphene/ polydimethylsiloxane composite material.