▎ 摘　　要

NOVELTY - The structure has a copper structure (22') contained within an opening present in a dielectric material (12). The copper structure is provided with an uppermost surface that is coplanar with an uppermost surface of dielectric material. A graphene cap (24) is located at top of uppermost surface of copper structure. The graphene cap is provided with edges that are vertically coincident with edges of copper structure. USE - Interconnect structure for integrated microelectronic circuit. ADVANTAGE - Since the graphene cap which is provided with edges that are vertically coincident with edges of copper structure, the diffusion of copper through the graphene cap and is provide with high conductivity. Thus the interconnect structure can be provided with improved electro migration (EM) resistance as a result of utilizing graphene as a diffusion barrier and/or cap for copper interconnect structures. As the structure size decreases, the practical significance of EM increases. Hence the diffusion barrier thickness can be scaled anymore with scaling pitch effectively. DESCRIPTION OF DRAWING(S) - The drawing shows a cross sectional view of the interconnect structure. Substrate (10) Dielectric material (12) Copper structure (22') Graphene cap (24) Metal-containing cap (26)