• 专利标题:   Alloy method for preparing large area graphene thin film by depositing carbon alloy film on high temperature resistant substrate, annealing film, providing carbon atom concentration in alloy thin film surface and growing graphene thin film.
  • 专利号:   CN102808149-A
  • 发明人:   XU Z
  • 专利权人:   XU Z
  • 国际专利分类:   C01B031/04, C23C014/14, C23C014/58
  • 专利详细信息:   CN102808149-A 05 Dec 2012 C23C-014/14 201342 Pages: 4 Chinese
  • 申请详细信息:   CN102808149-A CN10282933 10 Aug 2012
  • 优先权号:   CN10282933

▎ 摘  要

NOVELTY - An alloy method for preparing large area graphene thin film comprises depositing carbon alloy film on high temperature resistant substrate; high temperature annealing to alloy film, providing carbon atom concentration in alloy thin film surface and epitaxially growing graphene thin film; and reducing temperature to room temperature, optimizing graphene thin film crystallization to obtain high quality on alloy thin film surface area graphene film. USE - Alloy method for preparing large area graphene thin film. ADVANTAGE - The method is simple and easy to operate, and is suitable for industrial production.