▎ 摘　　要

NOVELTY - The method involves providing a semiconductor substrate surface with a graphene surface. A spin is provided with an organic metal protection layer or inorganic metal protection layer. A metal electrode is provided with an optical image. A graphene metal contact area is provided with the protection layer. A source/drain electrode is provided with a graphene field effect transistor. The source/drain electrode is made of titanium or gold. USE - Graphene field effect transistor preparing method. ADVANTAGE - The method enables improving graphene carrier migration rate. DESCRIPTION OF DRAWING(S) - The drawing shows a flow diagram illustrating a graphene field effect transistor preparing method. '(Drawing includes non-English language text)'