▎ 摘　　要

NOVELTY - Detection method of gallium nitride-High-electron-mobility transistor (GA/HEMT) device leakage channel, comprises (1) setting a series of bias voltages, measuring the device gate drive leakage current (IGSS), (2) setting a series of bias voltages, measuring the device saturation drain-source current (IDSS), (3) judging whether there is a leakage channel in the device according to the measured IGSS value and IDSS value, (4) detecting the leakage current between the two electrodes of graphene sheet (GS) and SG, (5) detecting the leakage current between the two electrodes of GD and DG, (6) detecting the leakage current between the DS and SD electrodes, (7) comparing and measuring 8 sets of data to determine the leakage channel of GaN-HEMT devices, and (8) according to the value of IGS and ISG, judging the position of leakage channel between GS. USE - The method is useful for detection method of gallium nitride-High-electron-mobility transistor device leakage channel. ADVANTAGE - The method utilizes the power device detector to operate, avoids the high cost of using chip-level expensive analytical instruments for traditional methods e.g. electron beam induced resistance change (EBIRCH), and is convenient, quick, simple and time-saving. DESCRIPTION OF DRAWING(S) - The drawing shows the distribution diagram of the leakage channels that may exist in defective GaN-HEMT devices. 5Electric leakage channel 6Leakage channel