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  • 专利标题:   Doping method of graphene used for forming channel layer in transistor, involves contacting graphene to rubber lens modified by chemical functional group.
  • 专利号:   KR2016114320-A, KR1711391-B1
  • 发明人:   CHO J H, CHOI Y, HWANG E, KIM B J, LEE Y
  • 专利权人:   UNIV SUNGKYUNKWAN RES BUSINESS FOUND
  • 国际专利分类:   C01B031/04, H01L029/66, H01L029/786
  • 专利详细信息:   KR2016114320-A 05 Oct 2016 C01B-031/04 201678 Pages: 13
  • 申请详细信息:   KR2016114320-A KR040635 24 Mar 2015
  • 优先权号:   KR040635

▎ 摘　　要

NOVELTY - Doping method of graphene involves contacting graphene to a rubber lens modified by a chemical functional group. USE - Doping method of graphene used for forming channel layer in transistor (claimed). DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for transistor, which comprises a channel layer obtained by doping method of graphene.