• 专利标题:   Method for patterning graphene and silver Nano-composite transparent conductive film, involves establishing target structure, and performing patterning process in transparent conductive film by removing patterned photo resist mask layer.
  • 专利号:   CN107765511-A
  • 发明人:   FANG X, XU Y, WANG C, YOU Y, CHEN X, WAN J
  • 专利权人:   SHANGHAI ADVANCED RES INST CHINESE ACAD
  • 国际专利分类:   G03F007/16, G03F007/20, G03F007/40
  • 专利详细信息:   CN107765511-A 06 Mar 2018 G03F-007/16 201820 Pages: 17 Chinese
  • 申请详细信息:   CN107765511-A CN10679703 17 Aug 2016
  • 优先权号:   CN10679703

▎ 摘  要

NOVELTY - The method involves establishing a target structure for preparing a composite transparent conductive film (S1), where the composite transparent conductive film comprises a graphene film and a silver Nano-wire thin film. A patterned photo resist mask layer is formed (S2) on the composite transparent conductive film. An etching process is performed (S3) in the composite transparent conductive film corresponding to the patterned photo resist mask layer. A patterning process is performed (S4) in the composite transparent conductive film by removing the patterned photo resist mask layer. USE - Method for patterning graphene and silver Nano-composite transparent conductive film. ADVANTAGE - The method enables realizing high patterning precision, avoiding patterned edge roughness occur with burr and realizing simple in structure. DESCRIPTION OF DRAWING(S) - The drawing shows flow diagram illustrating a method for patterning graphene and silver Nano- composite transparent conductive film. '(Drawing includes non-English language text)' Step for establishing a target structure for preparing a composite transparent conductive film (S1) Step for forming a patterned photo resist mask layer in the composite transparent conductive film (S2) Step for performing an etching process in the composite transparent conductive film (S3) Step for performing a patterning process in the transparent conductive film by removing the patterned photo resist mask layer (S4)