▎ 摘　　要

NOVELTY - The preparation method involves putting (101) the tungsten trioxide into the ceramic boat. The ceramic boat is placed in the quartz tube chamber. The sapphire substrate with graphene quantum dots is placed (102) in the ceramic boat. The ceramic boat is placed (103) in the central position of the high temperature constant temperature zone in the tubular furnace. The sulfur powder is put (104) into the ceramic boat, and placing in the low temperature area of the tubular furnace. The vacuum pump is connected (105) to vacuumed portion, so as to ensure the air of the quartz tube chamber is exhausted. The tubular furnace is heated (106) to a first predetermined temperature in a first predetermined time. The constant temperature reaction is performed for a second predetermined time to obtain a tungsten disulfide semiconductor thin film. USE - Preparation method of two-dimensional (2D) nanometer tungsten disulfide semiconductor film (claimed). ADVANTAGE - The graphene quantum dots with uniform size are prepared by the pyrolysis method of citric acid. The graphene quantum dots are used as accelerators for the growth of tungsten disulfide. The introduction of graphene quantum dots on the sapphire substrate reduces surface impurities, and promotes the deposition of tungsten disulfide. DESCRIPTION OF DRAWING(S) - The drawing shows a flow diagram illustrates the preparation method of 2D nanometer tungsten disulfide semiconductor film. (Drawing includes non-English language text). Step for putting the tungsten trioxide into the ceramic boat (101) Step for placing the sapphire substrate with graphene quantum dots in the ceramic boat (102) Step for placing the ceramic boat in the central position of the high temperature constant temperature zone in the tubular furnace (103) Step for putting the sulphur powder into the ceramic boat (104) Step for connecting the vacuum pump to vacuumed poriton, so as to ensure the air of the quartz tube chamber is exhausted (105) Step for heating the tubular furnace to a first predetermined temperature in a first predetermined time (106)