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  • 专利标题:   Graphene device structure for use in complementary metal oxide semiconductor device, has semiconductor doped region and graphene layer that are formed as drain region and source region of device structure respectively.
  • 专利号:   WO2012055196-A1, CN102468333-A, US2012181509-A1, CN102468333-B
  • 发明人:   LIANG Q, JIN Z, WANG W, ZHONG H, LIU X, ZHU H, YE T
  • 专利权人:   INST MICROELECTRONICS CHINESE ACAD SCI, LIANG Q, JIN Z, WANG W, ZHONG H, ZHU H
  • 国际专利分类:   H01L021/336, H01L029/16, H01L029/78, H01L029/06, H01L021/335, H01L029/775
  • 专利详细信息:   WO2012055196-A1 03 May 2012 H01L-029/78 201232 Pages: 23 Chinese
  • 申请详细信息:   WO2012055196-A1 WOCN071194 23 Feb 2011
  • 优先权号:   CN10532003

▎ 摘　　要

NOVELTY - The graphene device comprises a graphene layer, a gate region formed on the graphene layer, and a semiconductor doped region formed on one side of the gate region and contacted with the graphene layer. The semiconductor doped region is formed as drain region of device structure and the graphene layer is formed on the other side of gate region as the source region of device structure. USE - Graphene device structure for use in complementary metal oxide semiconductor (CMOS) device. ADVANTAGE - The on-off ratio of graphene device is improved by the semiconductor doped region without neither increasing the band gap of the graphene material nor sacrificing the carrier mobility of the material and the device speed, thus providing the graphene material with a better application in CMOS devices. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for method for manufacturing graphene. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of the graphene device.