▎ 摘　　要

NOVELTY - The transistor has a molybdenum disulfide layer (2) which is provided between the first graphene layer (1) and the second graphene layer (3). A hexagonal boron nitride (4) and the substrate are located below the second graphene layer. The first graphene layer and the second graphene layer maintain hexagonal atomic network and the distance to the molybdenum disulfide layer. The lateral periodicity of first graphene layer and the second graphene layer and the lateral periodicity of the molybdenum disulfide layer are adjusted. The substrate (5,6) is made of silicon dioxide and silicon. USE - Vertical tunneling transistor based on graphene-molybdenum disulfide heterostructure, used in electronic equipment. ADVANTAGE - The transistor can switch between on-state and off-state, low-barrier transport and super-barrier transport to obtain higher switching current ratio and stronger transmission characteristics. The cost of transistor is low. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of vertical tunneling transistor. Graphene layer (1,3) Molybdenum disulfide layer (2) Hexagonal boron nitride (4) Substrate (5,6)