▎ 摘　　要

NOVELTY - The transistor has a substrate provided with a bottom source electrode contact, a bottom drain contact and a gate metal layer. A source layer and a drain electrode contact layer are placed on the substrate. A source contact layer and the bottom drain contact are located at left and right sides of the grid metal layer. A gate dielectric layer is located on the grid metal layer. A graphene film is placed on a bottom layer source contact. USE - Graphene FET. ADVANTAGE - The FET has high mobility and better grid-control ability. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a method for manufacturing a graphene FET. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of a graphene FET.