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  • 专利标题:   Method for preparing graphene-based integrated gas sensing unit, involves fabricating silicon and silicon dioxide substrate, sputtering titanium/platinum electrode on substrate and transferring graphene to substrate.
  • 专利号:   CN110398522-A, CN211453446-U
  • 发明人:   WANG Z, WU C, PANG Z, LI L, WANG H, GENG L, YANG W, AO C
  • 专利权人:   BEIJING SMARTCHIP MICROELECTRONICS TECHN, STATE GRID INFORMATION TELECOM GROUP, STATE GRID CORP CHINA, BEIJING SMARTCHIP MICROELECTRONICS TECHN, STATE GRID INFORMATION TELECOM CO LTD
  • 国际专利分类:   G01N027/12
  • 专利详细信息:   CN110398522-A 01 Nov 2019 G01N-027/12 201989 Pages: 9 Chinese
  • 申请详细信息:   CN110398522-A CN10799649 28 Aug 2019
  • 优先权号:   CN10799649, CN21417550

▎ 摘　　要

NOVELTY - A graphene-based integrated gas sensing unit preparing method involves fabricating a silicon and silicon dioxide substrate, sputtering a titanium/platinum electrode on the silicon and silicon dioxide substrate, transferring a graphene to the silicon and silicon dioxide substrate to forming an ammonia sensitive portion, a hydrogen sensitive portion, and a nitrogen oxide sensitive portion on the graphene. The formed portion on the graphene is soaked in acetone and removed the photoresist. USE - Method for preparing graphene-based integrated gas sensing unit. ADVANTAGE - The method enables preparing graphene-based integrated gas sensing unit in simple and cost effective manner.