▎ 摘　　要

NOVELTY - The detector has a substrate, an AlN layer, a AlxGal-xN layer, a graphene layer, AlyGa1-yNlayer orderly connected from up to down. Two contact electrodes and the AlN layer are connected to an Al polar face for providing compressive stress, where a thickness of the AlxGal-xN layer is 500-1000nm, a thickness of the AlyGa1-yN layer is 10-50nm. USE - AlGaN-based graphene insertion layer ultraviolet detector. ADVANTAGE - The detector has better dislocation inhibition and a response level and response speed, improves a quality of an epitaxial layer, the graphene layer to improve carrier drift rate, an AlGaN heterostructure region inserted in a high mobility graphene material so as to obviously improve a carrier drift rate, has simple manufacturing process and wide application prospect. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a AlGaN-based graphene insertion layer ultraviolet detector manufacturing method. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of an AlGaN-based graphene insertion layer ultraviolet detector.