• 专利标题:   Metal chalcogenide layer-grown graphene comprises metal chalcogenide layer formed by dispersing metal chalcogenide powder on graphene film grown in horizontal and vertical directions by evaporating in high-purity gas atmosphere.
  • 专利号:   JP2018100194-A
  • 发明人:   DAYARAM M R, TANEMURA M, KALITA G
  • 专利权人:   UNIV NAGOYA
  • 国际专利分类:   C01B032/15, C01B032/18, C01B032/182, C01G041/00
  • 专利详细信息:   JP2018100194-A 28 Jun 2018 C01B-032/15 201847 Pages: 11 Japanese
  • 申请详细信息:   JP2018100194-A JP246284 20 Dec 2016
  • 优先权号:   JP246284

▎ 摘  要

NOVELTY - A metal chalcogenide layer-grown graphene comprises metal chalcogenide layer formed by dispersing metal chalcogenide powder on graphene film grown in horizontal and vertical directions by evaporating in high-purity gas atmosphere. USE - A metal chalcogenide layer-grown graphene for manufacture of catalyst for hydrogen generation and electrode for photocatalysts where a metal atom is exposed. ADVANTAGE - The metal chalcogenide layer-grown graphene has improved sensing efficiency of e.g., hazardous substance, in a broad wavelength range of visible light. By depositing a film containing carbon on the metal chalcogenide layer and another two-dimensional material by the plasma method, oxidation of the two-dimensional material by the atmosphere can be prevented. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included manufacture of metal chalcogenide layer-grown graphene which involves making graphene film grow by chemical vapor deposition (CVD) method to copper foil, moving to a silica/silicon (SiO2/Si) substrate, directly dispersing metal chalcogenide powder on graphene film after cleaning, and making metal chalcogenide layer grow in horizontal and vertical directions in high-purity gas atmosphere.