• 专利标题:   Graphene electrode preparation method, involves performing rear electrode layer acid preparing process, and performing graphene electrode layer and substrate chemical key reinforced combining process to form graphene electrode.
  • 专利号:   CN104157560-A, CN104157560-B
  • 发明人:   FENG W, WANG Z, YANG L, ZHANG J
  • 专利权人:   UNIV SHANGHAI
  • 国际专利分类:   H01L021/02, H01L021/28
  • 专利详细信息:   CN104157560-A 19 Nov 2014 H01L-021/28 201505 Pages: 5 Chinese
  • 申请详细信息:   CN104157560-A CN10193631 09 May 2014
  • 优先权号:   CN10193631

▎ 摘  要

NOVELTY - The method involves forming a graphite diluted primary electrode layer in a substrate. A graphite thin electrode layer is coated with a substrate chief offender. Rear electrode layer acid preparing process is performed. Graphene electrode layer and substrate chemical key reinforced combining process is performed to form a graphene electrode. A graphene thin film is formed with the substrate. A copper substrate preparation graphene thin film is coated with a PMMA layer. Vacuum drying process is performed. Graphene oxide dispersion liquid is prepared. USE - Graphene electrode preparation method. ADVANTAGE - The method enables forming graphene with the substrate for chemical key combine to improve graphene and substrate adhesion and easily separating effect, increase adhesion and charge transmission characteristic between the graphene and the substrate so as to ensure property of a photoelectric device. The method enables increasing photoelectric device preparation product rate and reducing production cost.