• 专利标题:   Silicon waveguide-graphene based optoelectronic device tunable waveguide grating, has ridge waveguide part formed with covering layer and graphene layers, where graphene layers are provided with interdigital electrode structures.
  • 专利号:   CN106501970-A
  • 发明人:   LU R, LIU T, TIAN C, YANG Z, YE S, XIA R, ZHANG S, LIU Y
  • 专利权人:   UNIV CHINA ELECTRONIC SCI TECHNOLOGY
  • 国际专利分类:   G02F001/00, G02F001/01
  • 专利详细信息:   CN106501970-A 15 Mar 2017 G02F-001/01 201722 Pages: 8 Chinese
  • 申请详细信息:   CN106501970-A CN11178146 19 Dec 2016
  • 优先权号:   CN11178146

▎ 摘  要

NOVELTY - The grating has a substrate provided with a ridge silicon waveguide that is provided with a ridge waveguide part (2). The ridge waveguide part is formed with a covering layer (3), isolation dielectric insulating layers (5, 8, 11), and graphene layers (6, 9). The graphene layers are provided with interdigital electrode structures. An electrode lead sets fork finger period of the interdigital electrode structures. An electrode (12) is made of gold, silver, platinum or copper. The insulating layers are made of silicon oxide, silicon nitrogen oxide or boron nitride. USE - Silicon waveguide-graphene based optoelectronic device tunable waveguide grating. ADVANTAGE - The grating improves tunable wavelength range and response speed, ensures light waves different selectivity under different electric field conditions and changes grating reflection wavelength in an effective manner. The grating is convenient to install. DESCRIPTION OF DRAWING(S) - The drawing shows a perspective view of a silicon waveguide-graphene based optoelectronic device tunable waveguide grating. Ridge waveguide part (2) Covering layer (3) Isolation dielectric insulating layers (5, 8, 11) Graphene layers (6, 9) Electrode (12)