▎ 摘　　要

NOVELTY - The device (1) has a source electrode layer (120) and a drain electrode layer (130) spaced apart from each other over a substrate (110). A channel layer (140) receives hydrogen, and is formed between the source electrode layer and the drain electrode layer over the substrate. A proton conductive layer is formed on the channel layer. A hydrogen source layer is formed on the proton conductive layer. A gate electrode layer is formed on the hydrogen source layer. The source electrode layer and the drain electrode layer are formed on a same plane. The proton conductive layer is spaced apart from the source electrode layer and the drain electrode layer. The channel layer is made of palladium, magnesium and yttrium. The proton conductive layer is made of material selected from a group consisting of proton exchange polymer, metal-organic framework, covalent-organic framework, sulfonated graphen and polymer-graphene composites. USE - Electronic device e.g. resistive memory device such as resistance change RAM, phase change RAM and magnetic change RAM. ADVANTAGE - The proton conductive layer is formed on the channel layer to increase a number of resistance states, increase a size ratio between the resistance states, increases linearity and symmetry between the resistance states and increases driving speed of the device. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of an electronic device according to an embodiment of the present disclosure. 1Electronic device 110Substrate 120Source electrode layer 130Drain electrode layer 140channel layer