▎ 摘　　要

NOVELTY - The device (100) comprises a substrate (102) which comprises a cavity (104). A single-crystalline semiconductor material (108) is positioned partially over the cavity of the substrate. A first contact (106) is arranged between the substrate and the single-crystalline semiconductor material. A first ohmic contact (114) is formed by the first contact and the single-crystalline semiconductor material. The single-crystalline semiconductor material is arranged between the first contact and a second contact (110). A second Ohmic contact (116) is formed by the second contact and the single-crystalline semiconductor material. USE - Single-crystalline semiconductor device e.g. film bulk acoustic resonator (claimed) used as radio frequency (RF) filters for use in wireless device e.g. cell phone. ADVANTAGE - The single-crystalline semiconductor material is positioned partially over the cavity of the substrate, and the contact is formed between the substrate and the semiconductor, where the contact and the material form an Ohmic contact, thus reducing the size of the resonator, and increasing the fabrication and operating efficiencies of the device. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method of forming bulk acoustic resonator. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of the single-crystalline semiconductor device. 100Single crystalline film bulk acoustic resonator device 102Substrate 104Cavity 106First contact 108Single-crystalline semiconductor material 110Second contact 114First ohmic contact 116Second ohmic contact