▎ 摘　　要

NOVELTY - The structure has a silicon substrate (110) whose surface is arranged with a graphene and includes nano-sized roughness, where thickness of the graphene is 1-2 nm and a material of the substrate and carbon of the graphene are covalently bonded and arranged between the surface of the substrate and the graphene. A bonding region covers a portion of the surface of the substrate and includes a silicon-carbon bond. USE - Graphene structure for a semiconductor device i.e. memory e.g. nonvolatile memory and volatile memory such as static RAM (SRAM), dynamic RAM (DRAM), and synchronous DRAM (SDRAM). Uses include but are not limited to a flash memory, a phase-change RAM (PRAM), a magneto-resistive RAM (MRAM), a resistive RAM (ReRAM), and a ferro-electric RAM (FRAM). ADVANTAGE - The structure has high electric mobility, excellent thermal characteristics, chemical stability and wide surface area. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method for forming a graphene structure. DESCRIPTION OF DRAWING(S) - The drawing shows a side view of a graphene structure. Silicon substrate (110)