▎ 摘　　要

NOVELTY - The formation method involves preparing a bottom layer of a graphene on a substrate. An area in which bottom layer graphene is needed is reserved and other areas are removed by oxygen plasma etching. A shielding layer is deposited as the bottom layer of one graphene doped type region. The other graphene doped type is transferred to a surface of a sample after photo-etching. A corrosion transferring graphene on the shielding layer and the shielding layer are removed, and horizontal graphene PIN junction is obtained. USE - Formation method of horizontal graphene PIN junction used in semiconductor device such as composite photo-electric detector, as well as used in thin film crystal growth field. ADVANTAGE - The horizontal graphene PIN junction can be formed by the simple process and is formed with improved performance. DESCRIPTION OF DRAWING(S) - The drawing shows the sectional views of the PIN junction during formation process. (Drawing includes non-English language text)