• 专利标题:   Manufacture of gas sensor for nitrogen oxide, involves placing microheater platform substrate having graphene-covered surface, to chemical vapor deposition reactor, injecting inert gas, hydrogen and sulfur source gas, reacting and cooling.
  • 专利号:   WO2017080104-A1, CN106706710-A, EP3376214-A1, JP2018533734-W, US2018328874-A1
  • 发明人:   LI T, GUO L, LIANG C, WANG Y
  • 专利权人:   SHANGHAI INST MICROSYSTEM INFORMATION, SHANGHAI INST MICROSYSTEM INFORMATION, SHANGHAI INST MICROSYSTEM INFORMATION, SHANGHAI INST MICROSYSTEM INFORMATION
  • 国际专利分类:   C01B031/04, G01N027/00, G01N027/12, C23C016/22, G01N033/00
  • 专利详细信息:   WO2017080104-A1 18 May 2017 G01N-027/00 201737 Pages: 26 Chinese
  • 申请详细信息:   WO2017080104-A1 WOCN070283 06 Jan 2016
  • 优先权号:   CN10764605

▎ 摘  要

NOVELTY - Manufacture of nitrogen oxide gas sensor involves providing graphene and a microheater platform substrate, transferring the graphene to the microheater platform substrate such that the substrate surface is covered with the graphene, placing the resultant substrate to a chemical vapor deposition reactor, performing gas injection and gas exhausting treatment using inert gas, injecting inert gas, hydrogen and sulfur source gas into the reactor, reacting, obtaining sulfur-doped graphene, terminating the injecting of sulfur source gas, and cooling. USE - Manufacture of gas sensor for nitrogen oxide. ADVANTAGE - The method enables efficient manufacture of nitrogen oxide gas sensor. The sensor has high sensitivity and selectivity with respect to nitrogen oxide gas molecules. DETAILED DESCRIPTION - Manufacture of nitrogen oxide gas sensor involves providing graphene and a microheater platform substrate, transferring the graphene to the microheater platform substrate such that the substrate surface is covered with the graphene, placing the resultant substrate to a chemical vapor deposition reactor, performing gas injection and gas exhausting treatment using inert gas, injecting inert gas and hydrogen gas (H2) into the reactor at temperature (T1), then injecting the inert gas, hydrogen gas (H3) and sulfur source gas into the reactor at temperature (T2), reacting, obtaining sulfur-doped graphene, terminating the injecting of sulfur source gas, and cooling the reactor in the protective atmosphere of hydrogen and inert gas. An INDEPENDENT CLAIM is included for nitrogen oxide gas sensor, which comprises the microheater platform substrate and sulfur-doped graphene. The microheater platform substrate is provided with a heater and a test electrode. The sulfur-doped graphene is covered on the test electrode surface.