• 专利标题:   Preparing quantum dots, comprises e.g. using two-dimensional materials to prepare two-dimensional material substrates, placing material in growth chamber, spraying raw material on surface of material, and subjecting raw material into adsorption, desorption, and growth on surface of material.
  • 专利号:   CN114836827-A
  • 发明人:   LIU F, WEI Z, YANG J, XIN K, LI L, DI S
  • 专利权人:   INST SEMICONDUCTORS CHINESE ACAD SCI
  • 国际专利分类:   C30B025/16, C30B025/18, C30B029/40
  • 专利详细信息:   CN114836827-A 02 Aug 2022 C30B-025/18 202297 Chinese
  • 申请详细信息:   CN114836827-A CN10477996 29 Apr 2022
  • 优先权号:   CN10477996

▎ 摘  要

NOVELTY - Preparing quantum dots, comprises using two-dimensional materials to prepare two-dimensional material substrates, placing the two-dimensional material substrate in a growth chamber, and increasing the temperature of the growth chamber at a first preset temperature, spraying raw material on the surface of the two-dimensional material substrate with a preset density beam through a molecular beam epitaxy beam source furnace, and subjecting the raw material into kinetic reaction process of adsorption, desorption, migration, nucleation and growth on the surface of the two-dimensional material substrate in a Van der Waals epitaxy mode to growing quantum dots. USE - The method is useful in preparing quantum dots. ADVANTAGE - The method: utilizes two-dimensional material as a substrate, which does not require specific lattice matching conditions; and can achieve the growth of quantum dots even when the lattice symmetry is different.