▎ 摘　　要

NOVELTY - The graphene optimized wide bandgap semiconductor radiation detector has a substrate (1), a semiconductor absorption layer (2), a dielectric layer (3) and a metal upper electrode (4) that are sequentially formed on the upper surface of the substrate. A graphene insertion layer (5) and a metal lower electrode (6) are sequentially formed on the lower surface of the substrate. The material of the semiconductor absorption layer is any one of silicon carbide, gallium nitride, zinc oxide, and diamond. The material of the dielectric layer is any one of silicon di oxide, aluminum oxide, and titanium oxide. The material of the metal bottom electrode is any one of titanium, aluminum, nickel, and gold. USE - Graphene optimized wide bandgap semiconductor radiation detector. ADVANTAGE - The detector realizes graphene/silicon carbide high interface built-in electric field based on Fermi level adjustable performance of graphene, improves carrier separation transport, and optimizes energy resolution of the detector. DESCRIPTION OF DRAWING(S) - The drawing shows the schematic diagram of the structure of the graphene optimized wide-gap semiconductor radiation detector. Substrate (1) Semiconductor absorption layer (2) Dielectric layer (3) Metal upper electrode (4) Graphene insertion layer (5) Metal lower electrode (6)