▎ 摘　　要

NOVELTY - The method involves patterning a semiconductor silicon substrate. The semiconductor silicon substrate is doped with a carbon element that is formed with a patterned carbon-containing layer. The patterned carbon-containing layer is formed as a patterned graphene layer. Depth of the carbon-containing layer is less than 10 nm. Laser annealing process is performed by an yttrium aluminum garnet (YAG) laser beam. A patterned mask is removed after completing the laser annealing process. The semiconductor silicon substrate is formed with multiple trenches. USE - Patterned graphene forming method. ADVANTAGE - The method enables quickly realizing patterned graphene forming process. DESCRIPTION OF DRAWING(S) - The drawing shows a flow diagram illustrating a patterned graphene forming method.'(Drawing includes non-English language text)'