▎ 摘　　要

NOVELTY - The junction has a magnetic fixing layer (10), a barrier layer (20) and a composite free layer (30) orderly arranged. The composite free layer is orderly arranged with a first magnetic layer (310), a second magnetic layer (320) and a graphite layer (330). The graphene layer is located on the second magnetic layer. The first magnetic layer and the second magnetic layer are arranged in a vertical magnetization direction, where thickness of the first magnetic layer and the second magnetic layer is greater than 1.5nm, the first magnetic layer is made of a carbon monoxide iron boron or carbon monoxide iron, and the second magnetic layer is made of carbon monoxide iron boron, nickel and iron. USE - Magnetic tunnel junction for a magnetic RAM (claimed). ADVANTAGE - The second magnetic layer forms a strong perpendicular anisotropy with a graphene cover layer, so that excellent perpendicular anisotropy on a basis of a large thickness of a total magnetic layer is maintained. DESCRIPTION OF DRAWING(S) - The drawing shows a front view of a magnetic tunnel junction. Magnetic fixing layer (10) Barrier layer (20) Composite free layer (30) Magnetic layers (310,320) Graphite layer (330)