• 专利标题:   Semiconductor wafer comprises bulk semiconductor layer having opposite first and second surfaces, circuitry on first surface, metallic layer attached to first surface or second surface, and graphene layer.
  • 专利号:   US2022208640-A1, WO2022146953-A1
  • 发明人:   REVIER D L, VENUGOPAL A, DADVAND N, COOK B S
  • 专利权人:   TEXAS INSTR INC, TEXAS INSTR INC
  • 国际专利分类:   H01L021/3205, H01L021/683, H01L021/78, H01L023/373, H01L023/532, B82Y030/00, H01L021/76
  • 专利详细信息:   US2022208640-A1 30 Jun 2022 H01L-023/373 202258 English
  • 申请详细信息:   US2022208640-A1 US138541 30 Dec 2020
  • 优先权号:   US138541

▎ 摘  要

NOVELTY - Semiconductor wafer (502) comprises a bulk semiconductor layer having opposite first and second surfaces; circuitry on the first surface; a metallic layer attached to the first surface or the second surface, the metallic layer comprising a transition metal; and a graphene layer (512) attached to the metallic layer. USE - The semiconductor wafer is useful for a semiconductor device. It can also be used for conductors, dielectrics, ceramics, oxides, and semiconductors. ADVANTAGE - The semiconductor wafer has a thermally conductive surface layer, which has a bulk semiconductor layer having a first surface and a second surface, circuitry on the first surface, and a metallic layer attached to the first or second surface. The graphene layer is attached to metallic layer, where first surface opposes the second surface and the metallic layer comprises a transition metal, and thus ensures simple and efficient fabrication of the semiconductor device with improved thermal conductivity. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for fabricating a semiconductor wafer to include a thermally conductive layer, the wafer having opposite first and second surfaces, which involves: (a) fabricating a circuit on the first surface; (b) depositing on a particular surface, using an inkjet printer, metallic nanoparticles (510), at least some of which include one or more carbon particles, where the particular surface is the first surface or the second surface; (c) after the step (a), sintering the metallic nanoparticles on the particular surface to form a metallic layer on the particular surface and a graphene layer on the metallic layer. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of wafer after sintering the layer of metallic nanoparticles to form a thermally conductive back side layer. Semiconductor wafer (502) Backside (504) Front side (506) Metallic nanoparticles (510) Graphene sheet (512)